Work

Wide-Range Threshold Voltage Control of Dual-Inner-Gate Gate-All-Around Field-Effect Transistor

Year: 2025

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2025.3605684

Authors: Seungjoon Jeong, Changhwan Shin

Institution: Korea University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea

Awards: G1350749769, G623835629

OpenAlex ID: W4413967012

FWCI: 0.228

Cites: 24

Cited by: 1

Related to: 10