Work

Ultrascaled Monolayer α -CS and SiP 2-D n-Type FETs: Performance Enhancement via Underlayer Modulation Beyond 5-nm Technology Nodes

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3602761

Authors: Md Muhiul Islam Muhiuddin, Shomen Kundu, Md. Kawsar Alam

Institution: Bangladesh University of Engineering and Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413967243

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Cites: 32

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Related to: 10