Work

Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3604397

Authors: Takeru Suto, Akira Inoue, Haruka Shimizu, Yuki Mori

Institution: Hitachi (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413967312

FWCI: 0.462

Cites: 28

Cited by: 2

Related to: 10