Work

Monolithically Integrated RTL-Based Inverters for Gate Driver IC Using β-Ga₂O₃ MOSFETs

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3602753

Authors: Ganesh Mainali, Dhanu Chettri, Vishal Khandelwal, Glen Isaac Maciel García, Mritunjay Kumar, Saravanan Yuvaraja, Xiaohang Li

Institution: King Abdullah University of Science and Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: King Abdullah University of Science and Technology

Award: G2435439527

OpenAlex ID: W4413967386

FWCI: 0.163

Cites: 40

Cited by: 1

Related to: 10