Work

Investigation of drain current injection-induced degradation and mechanisms in Schottky gate AlGaN/GaN HEMTs

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ae0348

Authors: Yanghu Peng, Hui Guo, Huaize Liu, Ruiling Gong, Zhaoxuan Fang, Shuai Wang, Aiqiang Cheng, Pengfei Shao, Jianming Lei, Rong Zhang, Youdou Zheng, Dunjun Chen

Institutions: Nanjing University, Nanjing University of Industry Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Jiangsu Province, National Key Research and Development Program of China

Awards: G110625647, G1785269170, G6771130816, G7449652921

OpenAlex ID: W4413973562

FWCI:

Cites: 29

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Related to: 10