Work

Dual-Segment AlGaN/GaN MOS HEMTs: A Simulation study on pH sensitivity Enhancement and Performance Optimization

Year: 2025

Type: conference-paper

Source: International Conference for Emerging Technology (INCET)

DOI: 10.1109/incet64471.2025.11140900

Authors: Nudrat Sufiyan, Anup Kumar Sharma

Institution: National Institute Of Technology Silchar

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4413978767

FWCI:

Cites: 16

Cited by:

Related to: 10