Work

A Novel Discrete GaN/AlGaN/GaN-Based Schottky Diode Thermal Sensor With a Sensitivity Up to 13.3 mV/K

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3604827

Authors: Yuhan Sun, Kangyao Wen, Wenmao Li, Chenkai Deng, Yifan Cui, Shoucheng Xu, Robert Sokolovskij, Yu-Long Jiang, Hong-Yu Yu

Institutions: Fudan University, State Key Laboratory of ASIC and System, Southern University of Science and Technology, Shenzhen Polytechnic University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Guangdong Science and Technology Department, Science, Technology and Innovation Commission of Shenzhen Municipality

Awards: G2413553065, G5459091115, G6485946272, G7298763462, G949607512, G970565826

OpenAlex ID: W4413979689

FWCI: 0.646

Cites: 21

Cited by: 2

Related to: 10