Year: 2025
Type: article
Abstract: This study explores the application of Polycarbosilane (PCS) as an intermediate adhesive bonding technique for 4H-SiC substrates aiming to overcome the challenges of producing high-quality and cost-effective substrates for high-power electronics. Thin layers of PCS mixed with m-xylene and AIBN (azobisisobutyronitrile) were deposited onto 4H-SiC substrates via a spin coating. For demonstration purposes, these coated 4H-SiC substrates were then bonded with another 4H-SiC substrate. A defect-free, high-temperature stable bond is facilitated by annealing at high temperatures. Effusion measurements were conducted to characterise the PCS thin films and examine the organic-inorganic transitions and the resulting outgassing at high temperatures. SEM analysis confirmed the uniformity of the bonded layer. These results demonstrate PCS’s potential in high-temperature applications and will stimulate further research exploring doped SiC bonding layers and their electrical properties.
Source: Materials science forum
DOI: 10.4028/p-do4k3j
Authors: Priyank Parmar, Manoj Kumar Yadav, Christopher Zellner, Guenter Wedl, Georg Pfusterschmied, Ulrich Schmid
Institution: TU Wien
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4413986104