Work

New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT

Year: 2025

Type: article

Abstract: This work explores the application of gallium nitride (GaN)-based solid-state devices for high-power, high-frequency, and high-temperature technologies. It presents an in-depth study of GaN on semi-insulating SiC substrates. The study demonstrates, through bow range investigation, optical microscopy, and X-ray diffraction (XRD), that by adapting growth parameters from those used for Si substrates to those suitable for SiC substrates, it is possible to achieve high-quality crystalline MOCVD growth both under on-axis and 4°off-axis substrate orientations.

Source: Materials science forum

DOI: 10.4028/p-stgt8t

Authors: Cristiano Calabretta, Nicolo Piluso, Simona Boninelli, Cristophe Iatosti, Emmanuel Roy, Daniele Calabriso, Louise Lilja, Alexandre Ellison, Carlo Riva, Ferdinando Iucolano, Andrea Severino

Institution: Institute for Microelectronics and Microsystems

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4413987242

FWCI:

Cites: 9

Cited by:

Related to: 10