Work

Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor

Year: 2025

Type: article

Abstract: Engineered SiC wafers with a thin 4H-SiC layer bonded on a polycrystalline carrier substrate for the application as substrate in epitaxy are investigated. Epitaxial layers grown on such substrates in 150 mm and 200 mm diameter are compared to those on state-of-the-art conventional substrates from different vendors. The performance of the engineered wafers is judged by doping and thickness uniformities as well as the number and statistics of killer defects in the epitaxial layer.

Source: Materials science forum

DOI: 10.4028/p-wvra7y

Authors: Philip Hens, Kevin M. Albrecht, Birgit Kallinger, Robin Karhu, Jürgen Erlekampf

Institution: Fraunhofer Institute for Integrated Systems and Device Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funder: European Commission

Awards: G434337789, Trusted European SiC Value Chain for a greener Economy