Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components
Year: 2025
Type: article
Abstract: This work discusses three aspects of the PVT growth process to reach a higher SiC crystal yield: (i) Type of carbon isolation material and procedure to maintain reproducible growth conditions from one process to the next. (ii) The pros and cons of temperature and power control (or a mixture of both) during the SiC crystal growth phase of the PVT process; and (iii) the selection of a set of process parameters and the specifications of the grown SiC crystal, which serve as a fingerprint of reproducible growth conditions (related to the selection and design of hot zone isolation components).
Source: Materials science forum
DOI: 10.4028/p-qcdyf7
Institution: Friedrich-Alexander-Universität Erlangen-Nürnberg
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4413987520