Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
Year: 2025
Type: article
Abstract: Axial sliced samples from 4H-SiC boules grown by PVT method were characterized by lab-based X-ray topography systems. Valuable information about dislocation behaviors during crystal growth was revealed. TSD/TMD propagation during PVT growth was studied. The different TSD/TMD propagation directions inside and outside the facet region were identified as the direct cause of the reduced TSD/TMD density at the facet boundary on some c-plane wafers. A defect reduction mechanism was proposed based on this discovery. It was observed that TSDs/TMDs were emitted by a void structure formed during crystal growth, which explained the elevated TSD/TMD density in the center regions of some wafers. The formation mechanism of such defect is different from the previous studies and remains under investigation.
Source: Materials science forum
DOI: 10.4028/p-f06bzd
Authors: Yafei Liu, Campbell Bouch, Pete Schunemann, Ryan Philpott, Mary Safko, Danielle Hamann, Mason Dupre, Andrew Goldberg
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4413987532