Work

P-type buried layer DTSCR with predicted improved overshoot performance and discharge ability for ESD protections of advanced nanotechnology

Year: 2025

Type: article

Source: Nanotechnology

DOI: 10.1088/1361-6528/ae03c6

Authors: Zhengwei Zhang, Shupeng Chen, Hongxia Liu, Shulong Wang, Ruibo Chen, Longhua Lin, Wei Huang

Institution: Xidian University

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G4170341743

OpenAlex ID: W4414006265

FWCI:

Cites: 25

Cited by:

Related to: 10