Work

Comprehensive Analysis of Distinct TID Effects on SGT MOSFETs at On/Off States and Radiation Hardening Strategies

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3602045

Authors: Junfeng Yu, Jihong Ding, Haonan Liu, Jun Ye, Xuan Xiao, Junyan Zhu, Ruihan Gao, Xiaodong Yang, Zhuang Wang, Chunlei Wu, Jiao Liang, Debin Zhang, Haiming Xu, Tao Wang, Liang Li, Qingdong Zhang, Weiye Mo, Yang Song, Chaoran Song, Wei Huang, D. W. Zhang

Institutions: Fudan University, State Key Laboratory of ASIC and System, China Resources (China), Suzhou Vocational University, Jiangnan University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3935084431

OpenAlex ID: W4414008975

FWCI: 0.227

Cites: 17

Cited by: 1

Related to: 10