Noise fluctuations in composition-graded mid-wavelength infrared photodiode from temperature and illumination
Year: 2025
Type: article
Abstract: This paper is mainly centered on the nature of low frequency noise fluctuations in composition-graded HgCdTe mid-wavelength infrared (MWIR) photodiode with temperature across 80 K-300 K under dark and blackbody illumination. The results demonstrate an improvement of the Hooge parameter (5.3 × 10 −10 vs reference 5 × 10 −9 ) in dark noise which confirms a better device performance. Wavelength-dependent photo-induced noise characteristics show that under 420 K blackbody illumination, noise fluctuates over 3 orders, significantly exceeding under 550 K and 720 K illumination, while the anomalous noise reduction above 180 K reveals the dark current's suppression effect on photocurrent noise. These findings elucidate photo-induced noise mechanisms in MWIR detectors, providing critical insights for performance optimization through material fabrication.
Source: Optics Express
DOI: 10.1364/oe.574784
Authors: Jiahui Geng, Jian Huang, Zihao Wang, Linxuan He, Xun Li, Xi Wang, Songmin Zhou, Zhikai Gan, Xiren Chen, Baile Chen, Chun Lin, Liqi Zhu
Institutions: ShanghaiTech University, Shanghai University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
Awards: G230600094, G2641176445
OpenAlex ID: W4414013160