Work

Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications

Year: 2025

Type: article

Abstract: The increasing demand for WBG materials like SiC has led STMicroelectronics to expand wafer diameter from 150 mm to 200 mm, enhancing production yield and reducing costs. However, this expansion poses challenges in preserving crystalline quality. This investigation examines the impact of defects on 200 mm wafers, focusing on Total Usable Area (TUA) and electrical performance, particularly in wafers with polytype inclusions and high basal plane dislocation (BPD) density. Although the results for non-standard wafers show a significant reduction in TUA and an increase in electrical failures, the overall distribution of functional and non-functional devices remains stable, indicating process consistency.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-4rm2er

Authors: Chiara Nania, Domenica Raciti, Cristiano Calabretta, Fabiana Vento, Ruggero Anzalone, Enzo Fontana, Andrea Severino

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4414018053

FWCI: 0.231

Cites: 7

Cited by: 1

Related to: 10