Work

Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes

Year: 2025

Type: article

Abstract: We have proposed an E-V-C (Expansion-Visualization-Contraction) method by using UV irradiation, for screening potential defects which causes reliability issue called bipolar degradation in 4H-SiC devices. This method is based on the property that the REDG (recombination-enhanced dislocation glide) mechanism causing the bipolar degradation can be reproduced by UV irradiation. However, in order to apply this method as a screening, accurate quantification of the correlation between current density in forward bias and UV irradiance is required. This article describes how to set UV irradiation conditions (irradiance and irradiation time) to simulate forward biased current conditions.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-g8pe23

Authors: Yasuyuki Igarashi, Kazumi Takano, Yohsuke Matsushita, Takuya Morita

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4414018348

FWCI:

Cites: 6

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Related to: 10