Work

Effect of Si and Ti5Si3 on the adhesion at the α-Al2O3/γ-TiAl interface and oxygen diffusion in the alloy

Year: 2025

Type: article

Abstract: The effect of silicon and Ti5Si3 films on the adhesion properties of the α-Al2O3/γ-TiAl interface and oxygen diffusion in TiAl was studied using the projector augmented-wave method within density functional theory. It was shown that the formation of intermediate silicide layers at the oxide–alloy interface can lead to a significant decrease in the oxygen diffusion coefficient. At the same time, adhesion at the oxide–silicide interface remains high, while for the silicide–alloy interface, the values of ∼2.26–2.80 J/m2 typical for interfaces with metallic and metal-covalent bonds were obtained.

Source: Nanosystems Physics Chemistry Mathematics

DOI: 10.17586/2220-8054-2025-16-4-460-466

Authors: A. V. Bakulin, L. S. Chumakova, S. E. Kulkova

Institutions: Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences

Language: English

Topic: Intermetallics and Advanced Alloy Properties

Subfield: Mechanical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funder: Siberian Branch, Russian Academy of Sciences

Award: G7102093267