In-Memory Logic Operation Based on a Novel Spin-Orbit Torque MRAM
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Authors: Chenyi Wang, Min Wang, Zanhong Chen, Zhengjie Yan, Xiaoyang Xu, Yue Bai, Hongchao Zhang, Kewen Shi, Zhaohao Wang
Institution: Beihang University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Award: G7223662830
OpenAlex ID: W4414079794