Work

Structural Properties and Raman Spectra of Micron-Thick β-Ga2O3 Films Deposited on SiC/Porous Si/Si Substrates

Year: 2025

Type: article

Source: ECS Journal of Solid State Science and Technology

DOI: 10.1149/2162-8777/adfb52

Authors: V. V. Kidalov, M. P. Derhachov, A. S. Revenko, O. I. Gudymenko, R. A. Redko, O. O. Sushko, M. M. Koptiev, M. A. Assmann, R. P. Johnson

Institutions: TU Dortmund University, Dmytro Motornyi Tavria State Agrotechnological University, Oles Honchar Dnipro National University, University College Dublin, V.E. Lashkaryov Institute of Semiconductor Physics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Science Foundation Ireland, Deutsche Forschungsgemeinschaft

Awards: G1400879241, G1992524678

OpenAlex ID: W4414083115

FWCI:

Cites: 59

Cited by:

Related to: 10