MBE growth of GaSb on Ge-based templates grown on Si for mid-infrared photonics [Invited]
Year: 2025
Type: article
Abstract: We study the molecular beam epitaxy of GaSb layers on Ge-based templates grown on Si substrates by low-energy plasma-enhanced chemical vapor deposition. First, we study the growth mechanism to obtain a GaSb surface free of emerging antiphase boundaries on Ge substrates, and then we transfer this mechanism to Ge-based templates. Our investigations reveal that this mechanism is hindered by the crosshatch pattern formed during the Ge-based template growth. We demonstrate that using low-miscut (1°) Si substrates or chemical-mechanical polishing mitigates the effects of the crosshatch pattern, enabling the growth of GaSb layers free of emerging antiphase boundaries. These results represent a further step towards the monolithic integration of III-V on mid-infrared photonic platforms.
Source: Optical Materials Express
DOI: 10.1364/ome.569432
Authors: M. Silvestre, S. Lacaze, A. Gilbert, S. Calcaterra, A. De Cerdeira Oliveira, D. Impelluso, G. Isella, J.-B. Rodriguez, E. Tournié
Institution: Politecnico di Milano
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,843
OpenAlex ID: W4414090446