Work

High Temperature Studies of Near-UV InGaN/GaN Laser Diodes

Year: 2025

Type: conference-paper

Source: IEEE Research and Applications of Photonics in Defense Conference (RAPID)

DOI: 10.1109/rapid64712.2025.11151455

Authors: Matthew Seitz, Matthew Dwyer, Cheng Liu, Qinchen Lin, Guangying Wang, Tom Earles, Jacob Boisvere, Stephanie Diane Smith, Luke Mawst, Chirag Gupta, Shubhra S. Pasayat, Jing Zhang

Institutions: Rochester Institute of Technology, University of Wisconsin–Madison

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414118352

FWCI:

Cites: 4

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Related to: 10