Work

The Gain Theory of Doped Photoconductive Devices

Year: 2025

Type: conference-paper

Source: IEEE Research and Applications of Photonics in Defense Conference (RAPID)

DOI: 10.1109/rapid64712.2025.11151503

Author: Nenad Vrucinic

Institution: University of North Carolina at Charlotte

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414123542

FWCI:

Cites: 7

Cited by:

Related to: 10