Work

Negative bias threshold voltage instability and gate reliability in GaN tri-gate HEMTs with ferroelectric charge-trap gate stack

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0283587

Authors: Rahul Rai, Khanh Quoc Nguyen, Hung Duy Tran, Viet Quoc Ho, Chee How Lu, Jui Sheng Wu, You Chen Weng, Baquer Mazhari, Edward Yi Chang

Institutions: National Yang Ming Chiao Tung University, Indian Institute of Technology Kanpur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: Integration of Gan High-Electron-Mobility Transistors and Silicon Photonics Platform for High Spatial Selectivity Free-Space Optical Communication( I ), Research and Development of Ultra-High Frequency Gan Devices for Future Seamless Communication Applications( I ), Future Semiconductor Technologies Research Center( I ), ( Iv )

OpenAlex ID: W4414126971

FWCI: 1.551

Cites: 27

Cited by: 5

Related to: 10