Year: 2025
Type: article
Abstract: This study focuses on analyzing the electrical performance and characteristics of Schottky Barrier Diodes (SBDs) on the carbon face (C-face) epitaxial layer. The C-face epitaxial layer is grown on monocrystalline 4H-SiC and has a thickness of ~ 11 μm. It displayed minimal surface roughness, with an Rq of ~ 0.3 nm. The C-face termination epitaxy was examined using grazing-angle X-ray photoelectron spectroscopy (XPS) analysis. SBDs were fabricated using a Ti/Al metal stack. Schottky Barrier Height (ΦB) of about 1.2 eV was extracted from I-V measurements. Temperature-dependent I-V measurements demonstrated a forward voltage decrease as the temperature rises when the forward current is < 1 μA. However, for forward currents > 1 μA, the forward voltage increases with temperature. This rise in forward voltage could lead to a reduction in reverse recovery time and thus enhancing the switching speed. Additionally, the diode exhibits remarkable immunity to reverse leakage current up to 200 °C, surpassing the performance of the 6.5 kV JBS diode on Si-face 4H-SiC [1].
Source: Materials science forum
DOI: 10.4028/p-xywf2p
Authors: Qin Gui Roth Voo, Abdul Hannan Yeo, Lakshmi Kanta Bera, Umesh Chand, Yu Chieh Chien, Xuan Sang Nguyen, Wen Dong Song, Shiv Kumar, Hung Ming Chua, Navab Singh, Surasit Chung, Shane Kam, Marcin Zielinski, Loic Kabelaan, Walter Schwarzenbach, Ionut Radu, Loann Boudin
Institutions: Agency for Science, Technology and Research, Soitec (France)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4414145503