Work

Photosensitive Characteristics of Ga2O3/p-Si Schottky Barrier Solar-Blind Photodetector

Year: 2025

Type: article

Abstract: In this work, a Ga2O3/p-Si MOS-type Schottky barrier photodetector was successfully fabricated and characterized for solar-blind ultraviolet detection. The electrical and optoelectronic characterizations of the devices were performed under dark and 254 nm illumination. The device performance metrics, including Schottky barrier height$( {{{\Phi }_{B0}}} )$, ideality factor$( n )$, and series resistance$( {{{R}_s}} )$were extracted employing Cheung’s method and Norde’s methods. Both methods revealed that UV illumination leads to reductions in the ideality factor and series resistance, indicating improved carrier transport and reduced recombination losses due to the generation of photo-induced carriers. In addition, under the 254 nm illumination and reverse bias of −5 V, the devices exhibited a maximum responsivity of 0.39 A/W and a corresponding external quantum efficiency ($EQE)$of 193%. The noise-equivalent power ($NEP$) and detectivity ($D$) were 1.45×10−13W and 6.89×1012Jones, respectively, demonstrating the high sensitivity and potential of the Ga2O3/p-Si Schottky structure for deep UV sensing applications.

Source: IEEE photonics journal

DOI: 10.1109/jphot.2025.3607986

Authors: Chia-Hsun Chen, Shu-Bai Liu, Ting-Chun Wang

Institutions: National Formosa University, National Kaohsiung University of Science and Technology, National Cheng Kung University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,075

Funder: National Science and Technology Council