Work

High performance vertically integrated double barrier AlN memristive nonvolatile resistive random-access memory

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0267634

Authors: Xian-Qin Liu, Haijiao Harsan Ma, Siwen Zhang, Yueying Zhang, Yan Cao, Lei Wang, Hao-Nan Li, Yi-Xing He, Jiang Zhu, Yue-Qi Wang, Shengrui Xu, Chunping Jiang, Yue Hao, Jincheng Zhang

Institutions: Xidian University, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities

Awards: G4325260170, G7336771713, G8897782944

OpenAlex ID: W4414188272

FWCI: 0.225

Cites: 29

Cited by: 1

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