Influence of Crystal Dimensions and P-Layer Thickness on the Optimum Doping Rate for the Best Diffusion Capacity of a Polycrystalline Solar Cell
Year: 2025
Type: article
Abstract: After three-dimensional modeling, we expressed the diffusion capacity of p-layer charges through the transition zone as a function of the impurity concentration in the p-layer, the dimensions of a polycrystalline silicon crystal, and the penetration depth of the p-layer. After analyzing the impact of the parameters cited below on the diffusion capacity, we concluded that the best diffusion capacity is obtained for a dopant range between 1015 and 1017 cm−3. This range is modified by variations in crystal size and p-layer thickness. Thus, increasing crystal size shifts the optimum point towards high doping rates, while increasing p-layer thickness shifts the optimum point towards low p-layer doping rates.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4414190939