Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0265442
Authors: Yaoyao Jin, Zihao Zhang, Shanwu Ke, Yifan Zhao, Canhui Liu, Guangyu Liu, Cong Ye
Institutions: Dongguan University of Technology, Hubei University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G3803871773
OpenAlex ID: W4414205092