Highly Efficient Current‐Induced Torques Originating from Topological Surface States in Sb 2 Te 3

Year: 2025

Type: article

Abstract: Topological insulators (TIs) have shown great promise for the development of energy‐efficient and ultra‐fast spintronic devices leveraging charge‐spin interconversion (CSIC) mechanisms. Among them, chalcogenide‐based TIs stand out for their compatibility with wafer‐scale growth techniques. Recent studies have validated the topological properties of Sb 2 Te 3 thin films grown via metal–organic chemical vapor deposition on 4‐inch wafers. To advance Sb 2 Te 3 ‐based devices toward practical applications, CSIC efficiency must be evaluated under charge current injection in miniaturized electronic devices. The present study investigates spin‐orbit torque (SOT) and magnetoresistive responses in Sb 2 Te 3 /Au/Co/Au. Measurements reveal the high SOT efficiency acting on Co and originating from Sb 2 Te 3 , equivalent to a spin Hall angle up to 62.8 ± 3.2, and a spin Hall conductivity up to 3.6 ± 0.2 × 10 6 . These findings underscore the potential of the Sb 2 Te 3 TI as a leading candidate for efficient spintronic devices, providing a solid foundation for its integration into novel functional devices.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.202500280

Authors: Matteo Fettizio, Can Onur Avci, Roberto Mantovan, Emanuele Longo

Institutions: Institut de Ciència de Materials de Barcelona, Institute for Microelectronics and Microsystems

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,560

Funders: Fundación Carmen y Severo Ochoa, European Commission, Generalitat de Catalunya, Ministero dell’Istruzione, dell’Università e della Ricerca, Ministerio de Ciencia e Innovación, Agencia Estatal de Investigación, H2020 European Research Council

OpenAlex ID: W4414211978