Work

Corrigendum: Gate-driven transition temperatures of electron hopping behaviors in Hubbard bands formed by dopant-induced QD array in silicon nanowire (2025 J. Phys. D: Appl. Phys. 58 035102)

Year: 2025

Type: erratum

Abstract: Corrigendum: Gate-driven transition temperatures of electron hopping behaviors in Hubbard bands formed by dopant-induced QD array in silicon nanowire (2025 J. Phys. D: Appl. Phys. 58 035102), Shang, Zimeng, Wang, Bowei, Han, Weihua

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ae00d3

Authors: Zimeng Shang, Bowei Wang, Weihua Han

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funder: National Natural Science Foundation of China

Award: G8393464641

OpenAlex ID: W4414212585

Cites: 1

Cited by:

Related to: