Work

Effects of O2 Surface Treatment on Device Performance of AlGaN/GaN HEMTs with In Situ Crystalline SiN Cap Layer

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01428

Authors: Xin Luo, Tieying Zhang, Peng Cui, Handoko Linewih, Kaifa Qi, Xinkun Yan, Siheng Chen, Liu Wang, Jiacheng Dai, Zhaojun Lin, Xiangang Xu, Jisheng Han

Institution: Shandong University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Major Scientific and Technological Innovation Project of Shandong Province, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1217742046, G1473056774, G1713804460, G8524224075

OpenAlex ID: W4414213875

FWCI: 0.323

Cites: 23

Cited by: 1

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