Work

A Complementary 3T-Based eDRAM Macro for High-Density Dual-Direction CAM and Logic-in-Memory

Year: 2025

Type: article

Source: IEEE Transactions on Circuits and Systems I Regular Papers

DOI: 10.1109/tcsi.2025.3609463

Authors: Lintao Lan, Yuxin Zhou, Jincheng Wang, Yifei Li, Bin Ning, Yuhao Shu, Hui Wang, Yajun Ha

Institutions: ShanghaiTech University, Nanjing University of Aeronautics and Astronautics, Chinese Academy of Sciences, Shanghai Advanced Research Institute

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1314806456, G1385045742

OpenAlex ID: W4414229164

FWCI: 0.231

Cites: 38

Cited by: 1

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