660 nm GaInP-Enhanced Red VCSEL With Low Threshold and High-Purity Single-Mode Output
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Authors: Xiangrui Zheng, Zhengtai Ma, Xiaowei Qin, Quanwen Wang, Jun Deng, Jianjun Li, Chen Xu, Yiyang Xie
Institution: Beijing University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4414230113