Work

Exploration and Analysis of GaN-Based FETs with Varied Doping Concentration in Nano Regime for Biosensing Application

Year: 2025

Type: article

Abstract: This study conducts a comprehensive examination of a GaN channel-based nanobiosensor featuring a dielectrically modulated trigate FinFET structure, incorporating both uniform and Gaussian channel doping. The proposed device incorporates a nanocavity structure situated beneath the gate region, intended for the analysis of diverse biomolecules in biosensing applications. The proposed biosensor employs HfO2 as the gate dielectric, characterized by a dielectric constant of 25, leading to an enhanced switching ratio for the device. This study examines the electrical properties relevant to biomolecule identification, including the switching ratio, DIBL, threshold swing, threshold voltage, and transconductance. The sensitivity of these properties concerning the drain current is subsequently assessed. Enhanced sensitivity increases the likelihood of detecting biomolecules. The electrical property of a biomolecule is examined in the absence of another biomolecule within the cavity. The apparatus is designed to detect neutral biomolecules. Simultaneously, further investigational research has been undertaken regarding the linearity behavior of GAA FET, nanobiosensors, and dielectrically modulated TGFinFET. This study’s results have been compared with those of GaN-based FinFET and GaN SOI FinFET technologies. The data indicates approximately ∼103% and ∼42% improvements in IOFF and Switching ratio, respectively, when compared to IRDS 2025. The nanobiosensor (GAA FET) demonstrates enhanced linear performance concerning higher-order voltage and current intercept points, including VIP2, VIP3, IIP3, and P1dB.

Source: Biosensors

DOI: 10.3390/bios15090613