Work

Air Stability of Organic Thin‐Film Transistors with Thiol‐Functionalized Gold Bottom Source and Drain Contacts

Year: 2025

Type: article

Abstract: The contact resistance and the intrinsic channel mobility of p‐channel and n‐channel organic thin‐film transistors (TFTs) based on four different vacuum‐deposited small‐molecule semiconductors are monitored while the TFTs are stored in ambient air. The TFTs are fabricated in the inverted coplanar (bottom‐gate, bottom‐contact) device architecture, and the gold contact surface is functionalized using thiols. The initial contact resistance of all TFTs is quite small, between and 125 and 450 Ωcm, but it degrades quite rapidly over a span of 150 h, by 43% to 500%, depending on the semiconductor. Simultaneously, the intrinsic channel mobility degrades only slightly (between 11% and 50%), indicating that device degradation occurs primarily at the contact‐semiconductor interface. Across all investigated parameters, DPh‐DNTT is found to yield the most air‐stable TFTs among the semiconductors investigated here.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.202500298

Authors: Tobias Wollandt, Sabrina Steffens, Karla Cordero‐Solano, Florian Letzkus, Joachim N. Burghartz, Hagen Klauk

Institutions: Max Planck Institute for Solid State Research, Institut für Mikroelektronik Stuttgart

Language: English

Topic: Organic Electronics and Photovoltaics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,560

Funders: Deutsche Forschungsgemeinschaft, RIKEN