Work

High on/off ratio 3D structured back-illumination deep ultraviolet biomimetic optoelectronic imaging devices

Year: 2025

Type: article

Abstract: Ultraviolet (UV) optoelectronic devices are widely utilized in space exploration, biological synaptic sensing, UV sterilization, and other fields. This paper presented and demonstrated an AlN-based three-dimensional back-illumination metal-semiconductor-metal flip-chip (FC-3D-MSM) UV detector, which exhibits high sensitivity (I p /I d ) and faster rise time compared to conventional metal-semiconductor-metal (MSM) devices. The performance of the FC-3D-MSM devices with several structural parameters were investigated using APSYS simulation software. Based on the simulation results, 0.2 μm etch depth three-dimensional metal-semiconductor-metal (3D-MSM) and 1.3 μm etch depth FC-3D-MSM devices were fabricated and tested. The experimental results reveal that the FC-3D-MSM device achieves a on/off ratio of 2743, a rise time of 200 ns, and a 250% increase in photocurrent relative to the traditional MSM device. Furthermore, the device system successfully realizes imaging capabilities and exhibits rapid recovery performance.

Source: Optics Express

DOI: 10.1364/oe.573284