Work

Effect of Top Al 2 O 3 Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 /SiO x /Si (MIFIS) Gate Structure

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3607888

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, Weifang University, North China University of Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation

Awards: G3053621377, G47840768, G688074970

OpenAlex ID: W4414265804

FWCI: 0.462

Cites: 38

Cited by: 2

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