Work

Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0287320

Authors: Danmei Lin, Xuefeng Zheng, Shaozhong Yue, Xiaohu Wang, Hao Zhang, Rui Han, Tian Zhu, Ling Lv, Yingzhe Wang, Tan Wang, Xiaohua Ma, Yue Hao

Institutions: Xidian University, Lanzhou Jiaotong University, China Electronic Product Reliability and Environmental Test Institute, China Aerospace Science and Technology Corporation

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G3472861482, G6167179484

OpenAlex ID: W4414267673

FWCI: 1.292

Cites: 30

Cited by: 4

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