Work

Symmetric and Asymmetric GaN-on-Si SPDT Switches Reusing Loaded Effects for 5G Millimeter-Wave Front-End Modules

Year: 2025

Type: article

Source: IEEE Transactions on Microwave Theory and Techniques

DOI: 10.1109/tmtt.2025.3609399

Authors: Guangxu Shen, Jiahao Huang, Haitao Ma, Haoshen Zhu, Wenjie Feng, Wenquan Che

Institutions: Nanjing University of Posts and Telecommunications, South China University of Technology

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G3258679165, G8401439392, G8956829151

OpenAlex ID: W4414270707

FWCI: 0.231

Cites: 27

Cited by: 1

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