Year: 2025
Type: article
Abstract: Strain governs not only the mechanical response of materials but also their electronic, optical, and catalytic properties. For this reason, the measurement of the 3D strain field is crucial for a detailed understanding and for further development of material properties through strain engineering. However, measuring strain variations along the electron beam direction has remained a major challenge for (scanning-) transmission electron microscopy (S/TEM). In this article, we present a method for 3D strain field determination using 4D-STEM. The method is based on the inversion of dynamical diffraction effects, which occur at strain field variations along the beam direction. We test the method against simulated data with a known ground truth and demonstrate its application to an experimental 4D-STEM dataset from an inclined pseudomorphically grown Al0.47Ga0.53N layer.
Source: Applied Physics Letters
DOI: 10.1063/5.0274964
Language: English
Subfield: Structural Biology
Domain: Life Sciences
Open Access status: green
Awards: G1286236842, G1286251239, G2618837358, G30714459, G3083819904, G3685081974, G419881185, G42916606, G4501827968, G498139845, Weiterentwicklung von S/TEM basierten Methoden hin zu genauen und zuverlässigen Messverfahren für Verzerrungsfelder und elektrische Potentiale, G650090426, G6652958823, G969889393
OpenAlex ID: W4414284646
