Work

Dynamic Switching Energy Monitoring during Gate Switching Stress to Evaluate Performance Degradation in Hard Switching Electric Power Conversion Systems

Year: 2025

Type: article

Abstract: In addition to the well-known bias temperature instability (BTI) phenomena, recently, it has been revealed that SiC MOSFETs show another instability during high-frequency repetitive switching between VGS(L) and VGS(H), referred to as gate-switching instability (GSI). This study shows the increase in switching energy caused by gate-switching instability VGS(th) drift as key performance parameters in electric power conversion systems, especially, when operating in hard-switching mode. A new methodology based on double pulse test was applied at each readout. The results highlighted the significance of the degradation mechanism through its impact on hard-switching applications with high-switching frequency. Therefore ruggedness against GSI plays a pivotal role in the long-term reliable operation of SiC MOSFET devices to ensure durable and efficient power conversion systems.

Source: Key engineering materials

DOI: 10.4028/p-m3e3xl

Authors: Andrea Piccioni, Maximilian Wolfgang Feil, Thomas Aichinger

Institution: Infineon Technologies (Austria)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: hybrid

OpenAlex ID: W4414314565