Optimization of Gate Oxide Screening Technology for Commercial SiC Discrete MOSFETs and Power Modules
Year: 2025
Type: article
Abstract: This study demonstrates a negative correlation between gate leakage current () and time to breakdown () of gate oxide in various commercial SiC discrete MOSFETs and power modules. SiC MOSFETs with higher leakage current at the same gate voltage exhibit lower oxide failure time in the constant-voltage Time-Dependent Dielectric Breakdown (TDDB) test. The novelty lies in the discovery that measured under conditions of either low gate voltage () at RT or high at 150°C can be utilized to identify discrete devices or power modules with non-infant failures or lower intrinsic lifetime. Aggressive screening based on helps to reduce non-infant extrinsic failure probability and identify devices with more uniformity of intrinsic lifetime.
Source: Key engineering materials
DOI: 10.4028/p-2bd9vo
Authors: Li Meng Shi, Michael Jin, Jia Shu Qian, Monikuntala Bhattacharya, Shiva Houshmand, Heng Yu Yu, Atsushi Shimbori, Marvin H. White, Anant K. Agarwal
Institutions: The Ohio State University, Ford Motor Company (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4414314639