Comparison of Digital and Atomic Layer Etching for Gate Recess in AlGaN/GaN MOSHEMTs for Ka-Band
Year: 2025
Type: article
Abstract: This study compares digital etching (DE) and atomic layer etching (ALE) for gate recessing in AlGaN/GaN metal oxide semiconductor high-electro-mobility transistors (MOSHEMTs) on Si substrate. While DE reduces plasma damage, it suffers from residual defects and etch variability. In contrast, ALE’s self-limiting mechanism enables a smoother surface, improving carrier transport and reducing charge traps. This enhances transconductance (g m) and threshold voltage (V th), while also suppressing gate leakage (I GS) and mitigating gate lag, collectively improving power performance (P out, PAE, Gain). Additionally, ALE reduces parasitic capacitances, increasing cutoff frequencies (f T/f MAX) and lowering noise figure (NF min). Thus, ALE is a highly promising technique for advancing next-generation high-frequency applications.
Authors: Hsuan-Yao Huang, Cheng-Xiang Liu, Yu Chen, Kuan-Pang Chang, Tsung-Ying Yang, You-Chen Weng, Jui-Sheng Wu, Cheng-Jun Huang, Edward Yi Chang
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $1,950
Award: G2329118083
OpenAlex ID: W4414317108