Work

Thermal boundary resistance measurement of GaN/Al2O3 interfaces based on heat source thermometry separation integrated chip

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0285682

Authors: Haibing Li, Shijie Pan, Shiwei Feng, Kun Bai, Xiaozhuang Lu, Hui Zhu, Yuanjie Lv, Xuan Li

Institutions: Beijing University of Technology, Hebei Semiconductor Research Institute, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Thermal properties of materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Beijing Municipal Commission of Education

Awards: G2681838757, G6504117725, G8848372375

OpenAlex ID: W4414330964

FWCI: 0.424

Cites: 32

Cited by: 2

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