Work

Dual‐Mode Neuromorphic Device Based on MoS2 2T0C DRAM for Neurons and Synapses

Year: 2025

Type: article

Source: Small

DOI: 10.1002/smll.202504283

Authors: Zhejia Zhang, Saifei Gou, Qihao Chen, Yang Liu, Yufei Song, Zhengjie Sun, Yuxuan Zhu, Xiangqi Dong, Xiaojun Tan, Yin Wang, Wenzhong Bao

Institution: Fudan University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Science and Technology Commission of Shanghai Municipality, National Key Research and Development Program of China

Awards: G2205578710, 二维半导体材料的晶圆级生长和原子层调控

OpenAlex ID: W4414333543

FWCI: 0.231

Cites: 30

Cited by: 1

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