Year: 2025
Type: article
Abstract: . In the article the improved technology of manufacturing of surface-barrier detectors (SBD) on silicon of n-type conductivity, adapted for manufacturing of SBDs used in radon radiometers, is proposed. The detectors have light protection, stable characteristics under the accepted operating conditions, optimally meeting the requirements for operation in the device. The technology makes it possible to provide a high yield of year-old counters, which reduces their cost price. The possibility of manufacturing PBDs on thin silicon wafers rejected for further use in planar technology is shown.
Source: ANRI
Authors: S. Lashaev, A. Tret'yakov
Institution: V. G. Khlopin Radium Institute
Language: English
Subfield: Radiation
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4414356602