Year: 2025
Type: conference-paper
Abstract: To address the issue of high leakage current caused by ZnO-Ga₂O₃-based varistors, this study introduces different concentrations of Co2O3 as auxiliary dopants. ZnO-based ceramic samples with varying Co2O3 doping levels were prepared via the solid-state reaction method, their effects on the microstructure and electrical properties of ZnO varistors were systematically analyzed. The study explored the role of Co2O3 doping in regulating the microstructure and electrical performance of ZnO varistors. The results demonstrate that Co2O3 doping enhances the nonlinear coefficient, suppresses leakage current, and increases the barrier height at grain boundaries. When the doping concentration of Co2O3 reaches 0.75 mol%, the nonlinear coefficient of ZnO varistors increases from 26 to 54, while the leakage current decreases from 370 μA/cm² to 0.32 μA/cm², exhibiting superior performance.
DOI: 10.1117/12.3085038
Authors: Zhipeng Ge, Chong Lu, Yu Xiang, Jinxia Xu, Lingyun Liu
Institution: Hubei University of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
OpenAlex ID: W4414357659
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