Large-Area Nanostructure Fabrication with a 75 nm Half-Pitch Using Deep-UV Flat-Top Laser Interference Lithography
Year: 2025
Type: article
Abstract: Micro- and nanopatterning is crucial for advanced photonic, electronic, and sensing devices. Yet achieving large-area periodic nanostructures with a 75 nm half-pitch on low-cost laboratory systems remains difficult, because conventional near-ultraviolet laser interference lithography (LIL) suffers from Gaussian-beam non-uniformity and a narrow exposure latitude. Here, we report a cost-effective deep-ultraviolet (DUV) dual-beam LIL system based on a 266 nm laser and diffractive flat-top beam shaping, enabling large-area patterning of periodical nanostructures. At this wavelength, a moderate half-angle can be chosen to preserve a large beam-overlap region while still delivering 150 nm period (75 nm half-pitch) structures. By independently tuning the incident angle and beam uniformity, we pattern one-dimensional (1D) gratings and two-dimensional (2D) arrays over a Ø 1.0 cm field with critical-dimension variation < 5 nm (1σ), smooth edges, and near-vertical sidewalls. As a proof of concept, we transfer a 2D pattern into Si to create non-metal-coated nanodot arrays that serve as surface-enhanced Raman spectroscopy (SERS) substrates. The arrays deliver an average enhancement factor of ~1.12 × 104 with 11% intensity relative standard deviation (RSD) over 65 sampling points, a performance near the upper limit of all-dielectric SERS substrates. The proposed method overcomes the uneven hotspot distribution and complex fabrication procedures in conventional SERS substrates, enabling reliable and large-area chemical sensing. Compared to electron-beam lithography, the flat-top DUV-LIL approach offers orders-of-magnitude higher throughput at a fraction of the cost, while its centimeter-scale uniformity can be scaled to full wafers with larger beam-shaping optics. These attributes position the method as a versatile and economical route to large-area photonic metasurfaces and sensing devices.
Source: Sensors
DOI: 10.3390/s25185906
Authors: Kexin Jiang, Mingliang Xie, Zhe Tang, Xiren Zhang, Dongxu Yang
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W4414385548