Work

Anisotropic Crystallization Growth of 4H-SiC: Insights from Molecular Dynamics

Year: 2025

Type: article

Source: The Journal of Physical Chemistry B

DOI: 10.1021/acs.jpcb.5c05183

Authors: Qi Li, Tinghong Gao, Kejun Dong, Guiyang Liu, Wanjun Yan, Jin Huang, Han Song

Institutions: Guizhou University, Western Sydney University, Anshun University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Guizhou Science and Technology Department

Awards: G2716247070, G4364478544, G5759542906, G7879965786

OpenAlex ID: W4414393175

FWCI: 0.231

Cites: 51

Cited by: 1

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